PH20100S Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PH20100S
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PH20100S
LFPAK
Plastic single-ended surface mounted package (Philips version LFPAK);
4 leads
Version
SOT669
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage (DC)
V_GS
gate-source voltage (DC)
I_D
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
25 °C ≤ T_j ≤ 150 °C
T_mb = 25 °C; V_GS = 10 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C
I_S
source (diode forward) current (DC)
I_SM
peak source (diode forward) current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 12 A;
t_p = 0.3 ms; V_DD ≤ 100 V; V_GS = 10 V;
starting at T_j = 25 °C
Min
Max Unit
-
100
V
-
±20
V
-
34.3 A
-
21.6 A
-
137
A
-
62.5 W
−55
+150 °C
−55
+150 °C
-
52
A
-
137
A
-
250
mJ
9397 750 13698
Product data sheet
Rev. 02 — 17 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 12