PDTC143ES Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC143ES
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a
TO-92; SOT54 plastic package.
PNP complement: PDTA143ES.
PINNING
PIN
DESCRIPTION
1
base/input
2
collector/output
3
emitter/ground
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_O
I_CM
P_tot
h_FE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR-----21--
resistor ratio
handbook, halfpage
1
2
3
2
R1
1
R2
3
MAM364
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
1
2
3
MGL136
Fig.2 Equivalent inverter
symbol.
CONDITIONS
open base
T_amb ≤ 25 °C
I_C = 10 mA; V_CE = 5 V
MIN.
−
−
−
−
30
3.3
TYP.
−
−
−
−
−
4.7
MAX.
50
100
100
500
−
6.1
UNIT
V
mA
mA
mW
kΩ
0.8
1
1.2
1998 May 20
2