PDTC124E Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 22 k-ohm, R2 = 22 k-ohm

Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Product specification
PDTC124E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
22
22
MAX. UNIT
50 V
100 mA
−
kΩ
−
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC124EE
PDTC124EEF
PDTC124EK
PDTC124EM
PDTC124ES
PDTC124ET
PDTC124EU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
06
36
06
DX
TC124E
*17⁽¹⁾
*06⁽¹⁾
PDTA124EE
PDTA124EEF
PDTA124EK
PDTA124EM
PDTA124ES
PDTA124ET
PDTA124EU
2004 Aug 17
2