PDTC123JE Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC123JE
FEATURES
• Built-in bias resistors R1 and R2 (typ. 2.2 and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SC-75 (SOT416)
plastic package. PNP complement: PDTA123JE.
handbook, halfpage ₃
1
2
Top view
3
R1
1
R2
2
MAM346
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
MARKING
TYPE NUMBER
PDTC123JE
MARKING CODE
28
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 21
2