PDTC114YT Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114YT
FEATURES
• Built-in bias resistors R1 and R2 (typ. 10 and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components and board space.
4 columns
3
APPLICATIONS
3
R1
1
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
1
Top view
2
MAM097
R2
2
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package.
Fig.1 Simplified outline (SOT23) and symbol.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
MARKING
TYPE NUMBER
PDTC114YT
MARKING CODE⁽¹⁾
∗27
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 21
2