PDTC114EU Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114EU
FEATURES
• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
handbook, 4 columns
3
3
R1
1
R2
2
1
2
Top view
MAM134
Fig.1 Simplified outline (SOT323) and symbol.
DESCRIPTION
NPN resistor-equipped transistor in a
SOT323 plastic package.
PNP complement: PDTA114EU.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTC114EU
MARKING
CODE⁽¹⁾
∗09
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
1999 Apr 16
2