PDTC114EEF Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114EEF
FEATURES
• Power dissipation comparable to
SOT23
• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor
encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: PDTA114EEF.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground
3
collector/output
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_O
I_CM
P_tot
h_FE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR-----21--
resistor ratio
handbook, halfpage ³
3
R1
1
R2
1
2
2
Top view
MAM412
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTC114EEF
MARKING
CODE
09
CONDITIONS
open base
T_amb ≤ 25 °C
I_C = 5 mA; V_CE = 5 V
MIN.
−
−
−
−
30
7
TYP.
−
−
−
−
−
10
MAX.
50
100
100
250
−
13
UNIT
V
mA
mA
mW
kΩ
0.8
1
1.2
1999 May 31
2