PDTC114E Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm

Philips Semiconductors
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
PDTC114E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
10
10
MAX. UNIT
50 V
100 mA
−
kΩ
−
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
09
09
04
DS
TC114E
*16⁽¹⁾
*09⁽¹⁾
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
2004 Aug 05
2