PDTA143ES Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA143ES
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
TO-92; SOT54 plastic package.
NPN complement: PDTC143ES.
PINNING
PIN
DESCRIPTION
1
base/input
2
collector/output
3
emitter/ground (+)
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_O
I_CM
P_tot
h_FE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR_-----21_--
resistor ratio
handbook, halfpage
1
2
3
2
R1
1
R2
3
MAM338
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
1
2
3
MGL136
Fig.2 Equivalent inverter
symbol.
CONDITIONS
open base
T_amb ≤ 25 °C
V_CE = −5 V; I_C = −10 mA
MIN.
−
−
−
−
30
3.3
TYP.
−
−
−
−
−
4.7
MAX.
−50
−100
−100
500
−
6.1
UNIT
V
mA
mA
mW
kΩ
0.8
1
1.2
1998 May 18
2