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PDTA143EE Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor | |||
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Philips Semiconductors
PNP resistor-equipped transistor
Product speciï¬cation
PDTA143EE
FEATURES
⢠Built-in bias resistors R1 and R2
(typ. 4.7 k⦠each)
⢠Simplification of circuit design
⢠Reduces number of components
and board space.
APPLICATIONS
⢠Especially suitable for space
reduction in interface and driver
circuits
⢠Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in
an SC-75 plastic package.
NPN complement: PDTC143EE.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IO
ICM
Ptot
hFE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
RR-----21--
resistor ratio
handbook, halfpage 3
1
2
Top view
3
R1
1
R2
2
MAM345
Fig.1 Simplified outline (SC-75) and symbol.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTA143EE
MARKING
CODE
01
CONDITIONS
open base
Tamb ⤠25 °C
IC = â10 mA; VCE = â5 V
MIN.
â
â
â
â
30
3.3
TYP.
â
â
â
â
â
4.7
MAX.
â50
â100
â100
150
â
6.1
UNIT
V
mA
mA
mW
kâ¦
0.8
1
1.2
1998 Jul 23
2
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