PDTA114ET Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA114ET
FEATURES
• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTC114ET.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground (+)
collector/output
handbook, 4 columns
3
3
R1
1
R2
2
1
2
Top view
MAM100
Fig.1 Simplified outline (SOT23) and symbol.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTA114ET
MARKING
CODE⁽¹⁾
∗03
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1999 Apr 13
2