PBYR725D Datasheet, PDF (2/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR725D series
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
pcb mounted, minimum footprint, FR4
board
ELECTRICAL CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_F
Forward voltage
I_R
Reverse current
C_d
Junction capacitance
I_F = 7.5 A; T_j = 125˚C
I_F = 15 A; T_j = 125˚C
I_F = 15 A
V_R = V_RWM
V_R = V_RWM; T_j = 100˚C
V_R = 5 V; f = 1 MHz, T_j = 25˚C to 125˚C
MIN. TYP. MAX. UNIT
-
-
3 K/W
- 50 - K/W
MIN.
-
-
-
-
-
-
TYP.
0.33
0.45
0.52
0.2
15
580
MAX. UNIT
0.4 V
0.52 V
0.62 V
5 mA
30 mA
- pF
February 1998
2
Rev 1.000