PBSS4350Z_15 Datasheet, PDF (2/9 Pages) NXP Semiconductors – 50 V low VCEsat NPN transistor

NXP Semiconductors
50 V low V_CEsat NPN transistor
Product data sheet
PBSS4350Z
FEATURES
• Low collector-emitter saturation voltage
• High collector current capability: I_C and I_CM
• High collector current gain (h_FE) at high I_C
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_CM
R_CEsat
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX. UNIT
50
V
5
A
<145 mΩ
PINNING
PIN
1
base
2
collector
3
emitter
4
collector
DESCRIPTION
handbook, halfpage
4
2, 4
DESCRIPTION
NPN low V_CEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
MARKING
TYPE NUMBER
PBSS4350Z
MARKING CODE
PB4350
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
2003 May 13
2