PBR941B_N_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
Preliminary specification
PBR941B
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
PINNING SOT23
PIN
1
base
2
emitter
3
collector
DESCRIPTION
APPLICATIONS
handbook, halfpage
3
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
1
Top view
Marking code: LBp
2
MSB003
Fig.1 Simplified outline (SOT23).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power gain
NF
noise figure
P_tot
R_{th j-s}
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
I_C = 0; V_CB = 6 V; f = 1 MHz
I_C = 15 mA; V_CE = 6 V; f_m = 1 GHz
I_C = 15 mA; V_CE = 6 V;
T_amb = 25 °C; f = 1 GHz
Γ_S = Γ_opt; I_C = 5 mA; V_CE = 6 V;
f = 1 GHz
T_s = 60 °C; note 1
MIN.
−
7
−
−
−
−
TYP.
0.3
9
16
1.5
−
−
MAX. UNIT
−
pF
−
GHz
−
dB
2.5 dB
360 mW
320 K/W
Note
1. T_s is the temperature at the soldering point of the collector pin.
2001 Jan 18
2