LLE18010X Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LLE18010X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common emitter class AB
amplifier.
MODE OF
f
V_CE
I_CQ
P_L1
G_po
OPERATION (GHz) (V) (mA) (W) (dB)
Z_i; Z_L
(Ω)
Class AB (CW) 1.85
24
10
≥1
≥8.5 see Figs
6 and 7
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications up to
2 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
handbook, 4 columns
1
Top view
3
2
c
b
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Apr 22
2