KMZ41 Datasheet, PDF (2/12 Pages) NXP Semiconductors – Magnetic field sensor

Philips Semiconductors
Magnetic field sensor
Preliminary specification
KMZ41
DESCRIPTION
The KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
strength > 40 kA/m (recommended field
strength > 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.
PINNING
PIN
1
2
3
4
5
6
7
8
SYMBOL
−V_O1
−V_O2
V_CC2
V_CC1
+V_O1
+V_O2
GND2
GND1
DESCRIPTION
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
ground 2
ground 1
handbook, halfpage 8
pin 1
index ₁
5
x
y
4
MGD790
Fig.1 Simplified outline SOT96-1.
QUICK REFERENCE DATA
SYMBOL
V_CC1
V_CC2
S
R_bridge
V_offset1
V_offset2
PARAMETER
bridge supply voltage
bridge supply voltage
sensitivity (α₁ = 45°; α₂ = 0°)
bridge resistance
offset voltage
offset voltage
MIN.
−
−
2.44
2
−2
−2
TYP.
5
5
2.72
2.5
−
−
MAX.
9
9
3.00
3
+2
+2
UNIT
V
V
mV/°
kΩ
mV/V
mV/V
2000 Apr 18
2