J174 Datasheet, PDF (2/6 Pages) NXP Semiconductors – P-channel silicon field-effect transistors

Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175;
J176; J177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
1 = source
2 = gate
3 = drain
Note: Drain and source are
interchangeable.
handbook, half¹pa₂ge
3
d
g
s
MAM388
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
up to T_amb = 50 °C
Drain current
−V_DS = 15 V; V_GS = 0
Drain-source ON-resistance
−V_DS = 0.1 V; V_GS = 0
± V_DS max.
30
V
V_GSO max.
30
V
−I_G
max.
50
mA
P_tot
−I_DSS
max.
min.
max.
400
J174
20
135
J175
7
70
J176
2
35
mW
J177
1.5 mA
20 mA
R_{DS on} max.
85
125
250
300 Ω
April 1995
2