CGY2032BTS Datasheet, PDF (2/12 Pages) NXP Semiconductors – DECT 500 mW power amplifier

Philips Semiconductors
DECT 500 mW power amplifier
Preliminary specification
CGY2032BTS
FEATURES
• Power Amplifier (PA) overall efficiency 55%
• 27.5 dBm saturated output power at 3.2 V
• 0 dBm input power
• 40 dB linear gain
• Operation without negative supply
• Wide operating temperature range −30 to +85 °C
• SSOP16 package.
APPLICATIONS
• 1.88 to 1.9 GHz transceivers for DECT applications
• 2 GHz transceivers: Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS).
GENERAL DESCRIPTION
The CGY2032BTS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
QUICK REFERENCE DATA
SYMBOL
V_DD
I_DD
P_o
T_amb
PARAMETER⁽¹⁾
positive supply voltage
total drain current
output power
ambient temperature
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
MIN.
−
−
−
−30
TYP.
3.2
350
27.5
−
MAX. UNIT
−
V
−
mA
−
dBm
+85 °C
ORDERING INFORMATION
TYPE
NUMBER
CGY2032BTS
NAME
SSOP16
PACKAGE
DESCRIPTION
plastic shrink small outline package; 16 leads; body width 4.4 mm
VERSION
SOT369-1
BLOCK DIAGRAM
2000 Mar 14
handbook, halfpage ^{VDD1 VDD2 VDD3}
8
5
1
CGY2032BTS
11
16
RFI
15
2, 3, 4
9,10 6, 7 12, 13, 14
GND1 GND2 GND3
FCA080
RFO
OPM
Fig.1 Block diagram.
2