BZV85 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Voltage regulator diodes

Philips Semiconductors
Voltage regulator diodes
Product specification
BZV85 series
FEATURES
• Total power dissipation:
max. 1.3 W
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
handbook, halfpage_k
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APPLICATIONS
• Stabilization purposes.
The diodes are type branded.
MAM241
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
I_F
I_ZSM
P_tot
P_ZSM
T_stg
T_j
continuous forward current
non-repetitive peak reverse current t_p = 100 µs; square wave;
T_j = 25 °C prior to surge; see Fig.3
total power dissipation
t_p = 10 ms; half sinewave;
T_j = 25 °C prior to surge
T_amb = 25 °C; lead length 10 mm;
note 1
note 2
non-repetitive peak reverse power
dissipation
storage temperature
t_p = 100 µs; square wave;
T_j = 25 °C prior to surge
junction temperature
Notes
1. Device mounted on a printed circuit-board with 1 cm² copper area per lead.
2. If the leads are kept at T_tp = 55 °C at 4 mm from body.
MIN. MAX.
−
500
see Table
“Per type”
see Table
“Per type”
−
1
−
1.3
−
60
−65
+200
−
200
UNIT
mA
W
W
W
°C
°C
ELECTRICAL CHARACTERISTICS
Total series
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
CONDITIONS
I_F = 50 mA; see Fig.4
MAX.
1
UNIT
V
1999 May 11
2