BYV99 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifier

Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifier
Product specification
BYV99
FEATURES
• Glass passivated
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
This package is hermetically sealed
and fatigue free as coefficients of
Rugged glass SOD57 package, using _{expansion of all used parts are}
a high temperature alloyed
matched.
^{construction.}
2/3 page^k(Datasheet)
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F(AV)
I_FRM
I_FSM
E_RSM
T_stg
T_j
repetitive peak reverse voltage
continuous reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
T_tp = 50 °C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
T_amb = 60 °C; PCB mounting (see
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
T_tp = 50 °C; see Fig. 4
T_amb = 60 °C; see Fig. 5
t = 10 ms half sine wave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
MIN.
−
−
−
−
−
−
−
−
−65
−65
MAX.
600
600
1.00
UNIT
V
V
A
0.55 A
9
A
5
A
20
A
10
mJ
+175 °C
+150 °C
1996 Feb 19
2