BYD63 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Ripple blocking diode

Philips Semiconductors
Ripple blocking diode
Product specification
BYD63
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™⁽¹⁾ technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
repetitive peak reverse voltage
continuous reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
averaged over any 20 ms period;
T_tp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
averaged over any 20 ms period;
T_amb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
T_tp = 55 °C
T_amb = 65 °C
t = 10 ms half sine wave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
MIN.
−
−
−
MAX.
300
300
0.85
UNIT
V
V
A
−
0.45 A
−
8.25 A
−
4.45 A
−
5A
−65
+175 °C
−65
+175 °C
1996 Jun 10
2