BYD52 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery controlled
avalanche rectifiers
Preliminary specification
BYD52 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec™⁽¹⁾
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbokok, halfpage
a
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F(AV)
I_FSM
T_stg
T_j
repetitive peak reverse voltage
BYD52D
BYD52G
BYD52J
continuous reverse voltage
BYD52D
BYD52G
BYD52J
average forward current
non-repetitive peak forward current
storage temperature
junction temperature
T_amb = 25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period;
see Fig.2
t = 10 ms half sine wave;
T_j = 25 °C; V_R = V_RRMmax
see fig.3
MIN.
−
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
200 V
400 V
600 V
200 V
400 V
600 V
0.47 A
5A
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
CONDITIONS
I_F = 1 A; see Fig.4
V_R = V_RRMmax
V_R = V_RRMmax; T_j = 165 °C; see Fig.5
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A; see Fig.7
MAX.
3.6
1
100
30
UNIT
V
µA
µA
ns
1998 Dec 03
2