BYD163 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Ultra fast low-loss rectifier

Philips Semiconductors
Ultra fast low-loss rectifier
Product specification
BYD163
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec™⁽¹⁾
technology. The SOD81 package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F(AV)
I_FSM
T_stg
T_j
repetitive peak reverse voltage
continuous reverse voltage
average forward current
non-repetitive peak forward current
storage temperature
junction temperature
T_tp = 95 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 5 and 6
t = 10 ms half sinewave;
V_R = V_RRMmax
MIN.
−
−
−
−
−65
−65
MAX.
600
600
1
UNIT
V
V
A
25
A
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
CONDITIONS
I_F = 1 A; T_j = 150 °C; see Fig.2
I_F = 1 A; see Fig.2
V_R = V_RRMmax; see Fig.3
V_R = V_RRMmax; T_j = 150 °C; see Fig.3
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A
MAX.
1.05
1.25
5
150
50
UNIT
V
V
µA
µA
ns
1999 Feb 10
2