BY527 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Controlled avalanche rectifier

Philips Semiconductors
Controlled avalanche rectifier
Product specification
BY527
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
This package is hermetically sealed
and fatigue free as coefficients of
^{Rugged glass package, using a high}
temperature alloyed construction.
expansion of all used parts are
matched.
2/3 page^k(Datasheet)
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
E_RSM
T_stg
T_j
repetitive peak reverse voltage
crest working reverse voltage
continuous reverse voltage
average forward current
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
T_tp = 45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T_amb = 80 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
t = 10 ms half sinewave
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
see Fig.5
MIN.
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
1250 V
800 V
800 V
2.0 A
0.8 A
50 A
20 mJ
+175 °C
+175 °C
1996 Jun 11
2