BY479X-1700 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Damper diode fast, high-voltage

Philips Semiconductors
Damper diode
fast, high-voltage
Product specification
BY479X-1700
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_fr
Forward recovery voltage
t_fr
Forward recovery time
t_rr
Reverse recovery time
Q_s
Reverse recovery charge
CONDITIONS
I_F = 6.5 A
I_F = 6.5 A; T_j = 125 ˚C
V_R = V_RWMmax
V_R = V_RWMmax; T_j = 125 ˚C
MIN.
-
-
-
-
TYP.
0.95
0.85
-
-
MAX.
1.3
1.2
0.25
1.0
UNIT
V
V
mA
mA
CONDITIONS
I_F = 6.5 A; dI_F/dt = 50 A/µs
I_F = 6.5 A; dI_F/dt = 50 A/µs; V_F = 5 V
I_F = 6.5 A; dI_F/dt = 50 A/µs; V_F = 2 V
I_F = 1 A; -dI_F/dt = 50 A/µs; V_R ≥ 30 V
I_F = 2 A; -dI_F/dt = 20 A/µs; V_R ≥ 30 V
MIN.
-
-
-
-
-
TYP.
12
200
400
250
2.0
MAX.
19
300
-
350
3.0
UNIT
V
ns
ns
ns
µC
September 1998
2
Rev 1.200