BY359-1500 Datasheet, PDF (2/5 Pages) NXP Semiconductors – Damper diode fast, high-voltage

Philips Semiconductors
Damper diode
fast, high-voltage
Product specification
BY359-1500, BY359-1500S
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL
V_F
I_R
PARAMETER
Forward voltage
Reverse current
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
CONDITIONS
I_F = 20 A
I_F = 10 A; T_j = 150˚C
V_R = 1300 V
V_R = 1300 V;
T_j = 100 ˚C
SYMBOL
t_rr
Q_s
V_fr
PARAMETER
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
CONDITIONS
I_F = 2 A; V_R ≥ 30 V;
-dI_F/dt = 20 A/µs
I_F = 10 A;
dI_F/dt = 30 A/µs
BY359-1500
TYP. MAX.
1.3 1.8
1.00 1.5
10 100
50 300
BY359-1500S
TYP. MAX.
1.5 2.0
1.25 1.75
10 100
100 600
UNIT
V
V
µA
µA
BY359-1500
TYP. MAX.
0.47 0.60
1.6 2.0
11.0
-
BY359-1500S
TYP. MAX.
0.28 0.35
0.70 0.95
17.0
-
UNIT
µs
µC
V
I
F
dI
F
IF
dt
trr
Qs
I
R
I
rrm
time
VF
25%
100%
Fig.1. Definition of t_rr, Q_s and I_rrm
time
VF
Fig.2. Definition of V_fr
V _fr
time
September 1998
2
Rev 1.300