BY329X-1500 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Damper diode fast, high-voltage

Philips Semiconductors
Damper diode
fast, high-voltage
Product specification
BY329X-1500, BY329X-1500S
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
CONDITIONS
TYP.
MAX. UNIT
BY329X- 1500 1500S 1500 1500S
I_F = 6.5 A
I_F = 6.5 A; T_j = 125 ˚C
V_R = 1300 V
V_R = 1300 V; T_j = 125 ˚C
1.1 1.3 1.45 1.6 V
1.05 1.2 1.35 1.5 V
- 250 - 250 µA
-
1
-
1 mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t_rr
Reverse recovery time
Q_s
Reverse recovery charge
V_fr
Peak forward recovery voltage
t_fr
Forward recovery time
CONDITIONS
TYP.
BY329X 1500 1500S
I_F = 1 A; V_R ≥ 30 V;
dI_F/dt = 50A/µs
0.18 0.13
I_F = 2 A; -dI_F/dt = 20 A/µs
I_F = 6.5A; dI_F/dt = 50A/µs
I_F = 6.5A; dI_F/dt = 50A/µs
1.6 0.7
17 23
210 220
MAX.
UNIT
1500 1500S
0.23 0.16 µs
2.0 0.95 µC
30
40 V
300 320 ns
September 1998
2
Rev 1.100