BY329-1500 Datasheet, PDF (2/5 Pages) NXP Semiconductors – Damper diode fast, high-voltage

Philips Semiconductors
Damper diode
fast, high-voltage
Product specification
BY329-1500, BY329-1500S
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
CONDITIONS
TYP.
MAX. UNIT
BY329 1500 1500S 1500 1500S
I_F = 6.5 A
I_F = 6.5 A; T_j = 125 ˚C
V_R = 1300 V
V_R = 1300 V; T_j = 125 ˚C
1.1 1.3 1.45 1.6 V
1.05 1.2 1.35 1.5 V
- 250 - 250 µA
-
1
-
1 mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t_rr
Reverse recovery time
Q_s
Reverse recovery charge
V_fr
Peak forward recovery voltage
t_fr
Forward recovery time
CONDITIONS
TYP.
BY329 1500 1500S
I_F = 1 A; V_R ≥ 30 V;
dI_F/dt = 50A/µs
I_F = 2 A; -dI_F/dt = 20 A/µs
I_F = 6.5A; dI_F/dt = 50A/µs
I_F = 6.5A; dI_F/dt = 50A/µs
0.18 0.13
1.6 0.7
17 23
210 220
MAX.
UNIT
1500 1500S
0.23 0.16 µs
2.0 0.95 µC
30
40 V
300 320 ns
IF
I
F
dI
F
dt
10%
tfr
time
trr
time
VF
Qs
V _fr
5V
I
VF
R
25%
100%
time
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t_rr and Q_s
September 1998
2
Rev 1.100