BUW84 Datasheet, PDF (2/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW84; BUW85
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT82 package.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems
• Switching applications.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to mounting base
3
emitter
ok, halfpage
2
1
MBB008
3
123
MBK107
Fig.1 Simplified outline (SOT82) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CESM
collector-emitter peak voltage
BUW84
BUW85
V_CEO
collector-emitter voltage
BUW84
BUW85
V_CEsat
I_C
I_CM
P_tot
t_f
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
V_BE = 0
open base
I_C = 1 A; I_B = 200 mA; see Fig.7
see Figs 4 and 5
see Figs 4 and 5
T_mb ≤ 25 °C; see Fig.8
resistive load; see Fig.11
TYP.
−
−
−
−
−
−
−
−
0.4
MAX. UNIT
800
V
1 000
V
400
V
450
V
1
V
2
A
3
A
50
W
−
µs
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from junction to ambient in free air
VALUE
2.1
100
UNIT
K/W
K/W
1997 Aug 14
1