BUK9Y19-75B_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 48.2 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge V_GS = 5 V; I_D = 20 A;
V_DS = 60 V; T_j = 25 °C;
see Figure 14
Min Typ Max Unit
-
-
121 mJ
-
12 -
nC
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9Y19-75B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK9Y19-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 13 April 2010
© NXP B.V. 2010. All rights reserved.
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