BUK9Y12-40E_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
BUK9Y12-40E
N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
mb
2
S
source
3
S
source
4
G
mb
D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9Y12-40E
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK9Y12-40E
Marking code
91240E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
-
V_DGR
drain-gate voltage
R_GS = 20 kΩ
-
V_GS
gate-source voltage
T_j ≤ 175 °C; DC
-10
T_j ≤ 175 °C; Pulsed
[1][2] -15
I_D
drain current
T_mb = 25 °C; V_GS = 5 V; Fig. 1
-
T_mb = 100 °C; V_GS = 5 V; Fig. 1
-
I_DM
peak drain current
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Fig. 4
-
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
-
Max Unit
40
V
40
V
10
V
15
V
52
A
36.7 A
208 A
65
W
BUK9Y12-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
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