BUK9509-55A Datasheet, PDF (2/14 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
BUK95/9609-55A
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
V_DS
drain-source voltage (DC)
-
I_D
drain current (DC)
T_mb = 25 °C; V_GS = 5 V
-
P_tot
total power dissipation
T_mb = 25 °C
-
T_j
junction temperature
-
R_DSon drain-source on-state resistance
T_j = 25 °C; V_GS = 5 V; I_D = 25 A
7.6
T_j = 25 °C; V_GS = 4.5 V; I_D = 25 A
-
T_j = 25 °C; V_GS = 10 V; I_D = 25 A
6.4
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 5 V;
Figure 2 and 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_DR
reverse drain current (DC)
T_mb = 100 °C; V_GS = 5 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
T_mb = 25 °C; Figure 1
T_mb = 25 °C
I_DRM
peak reverse drain current
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source avalanche
energy
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
unclamped inductive load; I_D = 75 A;
V_DS ≤ 55 V; V_GS = 5 V; R_GS = 50 Ω;
starting T_mb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Min
-
-
-
[1] _-
[2] _-
[2] _-
-
-
−55
−55
[1] _-
[2] _-
-
-
Max Unit
55
V
108
A
211
W
175
°C
9
mΩ
10
mΩ
8
mΩ
Max Unit
55
V
55
V
±15
V
108
A
75
A
75
A
433
A
211
W
+175 °C
+175 °C
108
A
75
A
433
A
400
mJ
9397 750 09229
Product data
Rev. 01 — 21 February 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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