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BUK7620-55 Datasheet, PDF (2/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET
◁
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7620-55
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
VGS = 0 V; ID = 0.25 mA;
voltage
Tj = -55˚C
Gate threshold voltage
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
Zero gate voltage drain current VDS = 55 V; VGS = 0 V;
Tj = 175˚C
Gate source leakage current VGS = ±10 V; VDS = 0 V
Tj = 175˚C
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
VGS = 10 V; ID = 25 A
resistance
Tj = 175˚C
MIN.
55
50
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
15
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
20
42
UNIT
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10 Ω
Resistive load
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
MIN.
6
-
-
-
-
-
-
-
-
-
TYP.
-
1350
330
155
18
50
40
30
2.5
7.5
MAX.
-
1800
400
215
26
75
50
40
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
trr
Reverse recovery time
IF = 40 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
52
A
-
- 208 A
- 0.95 1.2 V
-
1.0
-
-
47
-
ns
- 0.15 -
µC
April 1998
2
Rev 1.100
 ▷