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BUK7606-30 Datasheet, PDF (2/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET
◁
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7606-30
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 30 V; VGS = 0 V;
Tj = 175˚C
VGS = ±10 V; VDS = 0 V
Tj = 175˚C
IG = ±1 mA;
VGS = 10 V; ID = 25 A
Tj = 175˚C
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
-
5
6 mΩ
-
-
11 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
ID = 75 A; VDD = 24 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 15 V; ID = 25 A;
VGS = 10 V; RG = 5 Ω
Resistive load
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
MIN.
12
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
25
84
14
28
4000
1150
450
40
70
100
50
3.5
4.5
MAX.
-
-
-
-
-
-
-
50
105
140
70
-
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr
Reverse recovery time
IF = 75 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
75
A
-
- 240 A
- 0.85 1.2 V
-
1.0
-
V
- 100 -
ns
-
0.2
-
µC
December 1997
2
Rev 1.100
 ▷