BUK7514-30 Datasheet, PDF (2/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7514-30
STATIC CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
I_DSS
I_GSS
±V_(BR)GSS
R_DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
V_GS = 0 V; I_D = 0.25 mA;
T_j = -55˚C
V_DS = V_GS; I_D = 1 mA
T_j = 175˚C
T_j = -55˚C
V_DS = 30 V; V_GS = 0 V;
T_j = 175˚C
V_GS = ±10 V; V_DS = 0 V
T_j = 175˚C
I_G = ±1 mA;
V_GS = 10 V; I_D = 25 A
T_j = 175˚C
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
-
12 14 mΩ
-
-
26 mΩ
DYNAMIC CHARACTERISTICS
T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
g_fs
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_{d on}
t_r
t_{d off}
t_f
L_d
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
V_DS = 25 V; I_D = 25 A
I_D = 69 A; V_DD = 24 V; V_GS = 10 V
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 25 V; I_D = 25 A;
V_GS = 10 V; R_G = 5 Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
9
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
38
7
14
1500
480
220
22
30
40
25
3.5
MAX.
-
-
-
-
-
-
-
35
60
50
38
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
December 1997
2
Rev 1.100