BUK7506-55A_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7506-55A
N-channel TrenchMOS standard level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
E_DS(AL)S
non-repetitive
I_D = 75 A; V_sup ≤ 55 V;
drain-source
R_GS = 50 Ω; V_GS = 10 V;
avalanche energy T_j(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
-
1.1 J
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78A (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUK7506-55A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
BUK7506-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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