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| BUK581-100A Datasheet, PDF (2/8 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK581-100A
STATIC CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.1 mA
VDS = 100 V; VGS = 0 V;
VDS = 100 V; VGS = 0 V; Tj = 125 ËC
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 0.9 A
MIN.
100
1.0
-
-
-
-
TYP. MAX. UNIT
-
-
V
1.5 2.0 V
1
10 µA
0.1 1.0 mA
10 100 nA
0.51 0.90 â¦
DYNAMIC CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
CONDITIONS
VDS = 25 V; ID = 0.9 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 â¦;
Rgen = 50 â¦
MIN.
1
-
-
-
-
-
-
-
TYP.
1.8
180
45
16
6
45
15
20
MAX.
-
300
60
25
10
55
25
30
UNIT
S
pF
pF
pF
ns
ns
ns
ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 0.9 A; VGS = 0 V
trr
Reverse recovery time
IF = 0.9 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
0.9 A
-
-
3.6 A
- 0.85 1.1 V
-
40
-
ns
-
100
-
nC
AVALANCHE LIMITING VALUE
SYMBOL
WDSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 0.9 A; VDD ⤠25 V;
VGS = 5 V; RGS = 50 â¦; Tamb = 25 ËC
MIN.
-
TYP.
-
MAX. UNIT
10 mJ
January 1998
2
Rev 1.000
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