BUK553-60A Datasheet, PDF(2/7 Page) NXP Semiconductors – PowerMOS transistor Logic level FET

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BUK553-60A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET

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Philips Semiconductors

PowerMOS transistor

Logic level FET

Product Specification

BUK553-60A/B

STATIC CHARACTERISTICS

Tmb = 25 ËC unless otherwise specified

SYMBOL PARAMETER

V(BR)DSS

VGS(TO)

IDSS

IDSS

IGSS

RDS(ON)

Drain-source breakdown

voltage

Gate threshold voltage

Zero gate voltage drain current

Zero gate voltage drain current

Gate source leakage current

Drain-source on-state

resistance

CONDITIONS

VGS = 0 V; ID = 0.25 mA

VDS = VGS; ID = 1 mA

VDS = 60 V; VGS = 0 V; Tj = 25 ËC

VDS = 60 V; VGS = 0 V; Tj =125 ËC

VGS = Â±15 V; VDS = 0 V

VGS = 5 V;

BUK553-60A

ID = 10 A

BUK553-60B

MIN.

60

1.0

-

-

-

-

-

TYP.

-

1.5

1

0.1

10

0.075

0.08

MAX.

-

2.0

10

1.0

100

0.085

0.10

UNIT

V

V

ÂµA

mA

nA

â¦

â¦

DYNAMIC CHARACTERISTICS

Tmb = 25 ËC unless otherwise specified

SYMBOL PARAMETER

gfs

Forward transconductance

Ciss

Input capacitance

Coss

Output capacitance

Crss

Feedback capacitance

td on

Turn-on delay time

tr

Turn-on rise time

td off

Turn-off delay time

tf

Turn-off fall time

Ld

Internal drain inductance

Ld

Internal drain inductance

Ls

Internal source inductance

CONDITIONS

VDS = 25 V; ID = 10 A

VGS = 0 V; VDS = 25 V; f = 1 MHz

VDD = 30 V; ID = 3 A;

VGS = 5 V; RGS = 50 â¦;

Rgen = 50 â¦

Measured from contact screw on

tab to centre of die

Measured from drain lead 6 mm

from package to centre of die

Measured from source lead 6 mm

from package to source bond pad

MIN.

7

-

-

-

-

-

-

-

-

TYP.

10

700

240

130

20

95

80

65

3.5

MAX.

-

825

350

160

30

120

110

85

-

UNIT

S

pF

pF

pF

ns

ns

ns

ns

nH

-

4.5

-

nH

-

7.5

-

nH

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ËC unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IDR

Continuous reverse drain

-

current

IDRM

Pulsed reverse drain current -

VSD

Diode forward voltage

IF = 21 A ; VGS = 0 V

trr

Reverse recovery time

IF = 21 A; -dIF/dt = 100 A/Âµs;

Qrr

Reverse recovery charge

VGS = 0 V; VR = 30 V

AVALANCHE LIMITING VALUE

Tmb = 25 ËC unless otherwise specified

SYMBOL PARAMETER

WDSS

Drain-source non-repetitive

unclamped inductive turn-off

energy

CONDITIONS

ID = 20 A ; VDD â¤ 25 V ;

VGS = 5 V ; RGS = 50 â¦

MIN. TYP. MAX. UNIT

-

-

21

A

-

-

84

A

-

1.3 1.7 V

-

60

-

ns

- 0.25 -

ÂµC

MIN. TYP. MAX. UNIT

-

-

45 mJ

April 1993

2

Rev 1.100

▷