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| BUK553-100A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK553-100A/B
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 100 V; VGS = 0 V; Tj = 25 ËC
VDS = 100 V; VGS = 0 V; Tj =125 ËC
VGS = ±15 V; VDS = 0 V
VGS = 5 V;
BUK553-100A
ID = 6.5 A
BUK553-100B
MIN.
100
1.0
-
-
-
-
-
TYP.
-
1.5
1
0.1
10
0.17
0.20
MAX. UNIT
-
V
2.0 V
10 µA
1.0 mA
100 nA
0.18 â¦
0.22 â¦
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 6.5 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 â¦;
Rgen = 50 â¦
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
6.0
-
-
-
-
-
-
-
-
TYP.
8.0
620
180
90
10
45
90
40
3.5
MAX.
-
825
250
120
20
60
115
55
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 13 A ; VGS = 0 V
trr
Reverse recovery time
IF = 13 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 13 A ; VDD ⤠50 V ;
VGS = 5 V ; RGS = 50 â¦
MIN. TYP. MAX. UNIT
-
-
13
A
-
-
52
A
-
1.2 1.5 V
-
90
-
ns
-
0.6
-
µC
MIN. TYP. MAX. UNIT
-
-
70 mJ
April 1993
2
Rev 1.100
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