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| BUK455-60A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor | |||
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Philips Semiconductors
PowerMOS transistor
Product Specification
BUK455-60A/B
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ËC
VDS = 60 V; VGS = 0 V; Tj =125 ËC
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK455-60A
ID = 20 A
BUK455-60B
MIN.
60
2.1
-
-
-
-
-
TYP.
-
3.0
1
0.1
10
0.03
0.04
MAX. UNIT
-
V
4.0 V
10 µA
1.0 mA
100 nA
0.038 â¦
0.045 â¦
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 20 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 â¦;
Rgen = 50 â¦
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
8
-
-
-
-
-
-
-
-
TYP.
13.5
1650
560
300
25
60
125
100
3.5
MAX.
-
2000
750
400
40
90
160
130
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 41 A ; VGS = 0 V
trr
Reverse recovery time
IF = 41 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 41 A ; VDD ⤠25 V ;
VGS = 10 V ; RGS = 50 â¦
MIN. TYP. MAX. UNIT
-
-
41
A
-
- 164 A
-
1.4 2.0 V
-
60
-
ns
- 0.30 -
µC
MIN. TYP. MAX. UNIT
-
- 100 mJ
April 1993
2
Rev 1.100
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