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BUK117-50DL Datasheet, PDF (2/6 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK117-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
VDS
ID
PARAMETER
Continuous drain source voltage1
Continuous drain current
CONDITIONS
-
VIS = 5 V; Tmb = 25 ËC
MIN.
-
-
ID
Continuous drain current
VIS = 5 V; Tmb ⤠110 ËC
-
II
Continuous input current
-
-5
IIRM
Non-repetitive peak input current
tp ⤠1 ms
-10
PD
Total power dissipation
Tmb ⤠25 ËC
-
Tstg
Storage temperature
-
-55
Tj
Continuous junction temperature2
normal operation
-
Tsold
Lead temperature
during soldering
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kâ¦
MIN.
-
MAX.
50
self -
limited
8
5
10
40
175
150
260
MAX.
2
UNIT
V
A
A
mA
mA
W
ËC
ËC
ËC
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
EDSM
EDRM
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
IDM = 8 A; VDD ⤠20 V
Tmb ⤠25 ËC
Tmb ⤠95 ËC; f = 250 Hz
-
100
mJ
-
20
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL PARAMETER
REQUIRED CONDITION
MIN. MAX. UNIT
VDS
Drain source voltage3
4 V ⤠VIS ⤠5.5 V
0
35
V
THERMAL CHARACTERISTIC
SYMBOL PARAMETER
Rth j-mb
Thermal resistance
Junction to mounting base
CONDITIONS
-
MIN. TYP. MAX. UNIT
-
2.5 3.1 K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.800
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