BUK100-50GS Datasheet, PDF (2/11 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK100-50GS
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DSS
Continuous off-state drain source
V_IS = 0 V
-
voltage¹
V_IS
Continuous input voltage
-
0
I_D
Continuous drain current
T_mb ≤ 25 ˚C; V_IS = 10 V
-
I_D
Continuous drain current
T_mb ≤ 100 ˚C; V_IS = 10 V
-
I_DRM
Repetitive peak on-state drain current T_mb ≤ 25 ˚C; V_IS = 10 V
-
P_D
Total power dissipation
T_mb ≤ 25 ˚C
-
T_stg
Storage temperature
-
-55
T_j
Continuous junction temperature²
normal operation
-
T_sold
Lead temperature
during soldering
-
MAX.
50
11
15
9.5
60
40
150
150
250
UNIT
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V_ISP
Protection supply voltage³
Over temperature protection
for valid protection
5
-
V
V_DDP(T)
V_DDP(P)
P_DSM
Protected drain source supply voltage V_IS = 10 V
Short circuit load protection
Protected drain source supply voltage⁴ V_IS = 10 V
V_IS = 5 V
Instantaneous overload dissipation T_mb = 25 ˚C
-
50
V
-
20
V
-
35
V
-
0.6
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
I_DROM
E_DSM
E_DRM
Repetitive peak clamping current
Non-repetitive clamping energy
Repetitive clamping energy
V_IS = 0 V
T_mb ≤ 25 ˚C; I_DM = 15 A;
V_DD ≤ 20 V; inductive load
T_mb ≤ 95 ˚C; I_DM = 4 A;
V_DD ≤ 20 V; f = 250 Hz
-
15
A
-
200
mJ
-
20
mJ
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V_DDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
November 1996
2
Rev 1.300