BUJ105AX Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ105AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES,I_CBO
I_CES
Collector cut-off current ¹
I_CEO
I_EBO
V_CEOsust
V_CEsat
V_BEsat
h_FE
h_FE
h_FEsat
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_CEO = V_CEOMmax (400V)
V_EB = 9 V; I_C = 0 A
I_B = 0 A; I_C = 10 mA;
L = 25 mH
I_C = 4.0A;I_B = 0.8 A
I_C = 4.0A;I_B = 0.8 A
I_C = 1 mA; V_CE = 5 V
I_C = 500 mA; V_CE = 5 V
I_C = 4.0 A; V_CE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
0.2 mA
-
0.5 mA
-
-
0.1 mA
-
-
1 mA
400
-
-
V
-
0.3 1.0
V
-
1.0 1.5
V
10 14 34
13 23 36
8
11 15
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
t_on
Turn-on time
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (inductive load)
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (inductive load)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_Con = 5 A; I_Bon = -I_Boff = 1 A;
R_L = 75 ohms; V_BB2 = 4 V;
I_Con = 5 A; I_Bon = 1 A; L_B = 1 µH;
-V_BB = 5 V
I_Con = 5 A; I_Bon = 1 A; L_B = 1 µH;
-V_BB = 5 V; T_j = 100 ˚C
TYP. MAX. UNIT
0.65 1
µs
1.8 2.5 µs
0.3 0.5 µs
1.2 1.7 µs
20 50 ns
1.4 1.9 µs
25 100 ns
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000