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| BUJ101A Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BUJ101A
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 1
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 5 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 0.1 A; IB = 10 mA
IC = 0.2 A; IB =20 mA
IC = 1 mA; VCE = 5 V
MIN.
-
-
-
400
-
-
10
TYP. MAX. UNIT
-
0.1 mA
-
1.0 mA
-
1 mA
-
-
V
-
0.8
V
-
1.0
V
-
32
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 0.2 A; IBon = -IBoff = 20 mA;
RL = 75 ohms; VBB2 = 4 V;
ICon = 0.2 A; IBon = 20m A; LB = 1 µH;
-VBB = 5 V
ICon = 0.2 A; IBon = 20m A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
-
0.5 µs
-
3
µs
-
0.3 µs
-
1.5 µs
40 100 ns
-
1.8 µs
-
200 ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
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