BU4540AW Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4540AW
STATIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
I_EBO
BV_EBO
V_CEsat
V_BEsat
h_FE
h_FE
Emitter cut-off current
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_EB = 7.5 V; I_C = 0 A
I_B = 1 mA
I_C = 16 A; I_B = 4 A
I_C = 16 A; I_B = 4 A
I_C = 1 A; V_CE = 5 V
I_C = 16 A; V_CE = 5 V
MIN.
-
-
-
7.5
-
t.b.f
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
14
-
V
-
3.0
V
-
1.0
V
t.b.f
-
5.35 6.5
DYNAMIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (110 kHz line
deflection dynamic test circuit).
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_Csat = 16 A;I_B1 =3.2 A;(I_B2 = -8 A)
I_Csat = 8 A;I_B1 =1.6 A;(I_B2 = -4.8 A)
TYP. MAX. UNIT
t.b.f t.b.f µs
t.b.f t.b.f µs
t.b.f t.b.f µs
t.b.f t.b.f µs
2 Measured with half sine-wave voltage (curve tracer).
January 1998
2
Rev 1.000