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BU4530AX Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
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Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4530AX
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 10 A; IB = 2.5 A
IC = 10 A; IB = 2.5 A
IC = 1A; VCE = 5 V
IC = 10 A; VCE = 5 V
MIN.
-
-
-
7.5
800
-
t.b.f
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
14
-
V
-
-
V
-
3.0
V
-
1.1
V
t.b.f
-
5.35 6.5
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (32 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (90 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 10 A;IB1 = 2 A;(IB2 = -5 A)
ICsat = 8 A;IB1 = 1.6 A;(IB2 = -4.8 A)
TYP. MAX. UNIT
145
-
pF
t.b.f t.b.f µs
t.b.f t.b.f µs
t.b.f t.b.f µs
t.b.f t.b.f µs
2 Measured with half sine-wave voltage (curve tracer).
January 1998
2
Rev 1.000
 ▷