BU4523DX Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4523DX
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
BV_EBO
R_be
V_CEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
V_CEsat
V_BEsat
h_FE
h_FE
V_F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
I_B = 600 mA
V_EB = 7.5 V
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_C = 8 A; I_B = 2 A
I_C = 8 A; I_B = 2 A
I_C = 1 A; V_CE = 5 V
I_C = 8 A; V_CE = 5 V
I_F = 8 A
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_Csat = 8.0 A;I_B1 = 1.6 A
(I_B2 = -4.0 A)
I_Csat = t.b.f
MIN.
-
-
7.5
-
800
-
0.85
4.2
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
12.5 -
V
46
-
Ω
-
-
V
-
3.0
V
0.95 1.1
V
t.b.f
5.8 7.3
-
2.2
V
TYP. MAX. UNIT
4.5 5.5 µs
0.30 0.40 µs
t.b.f t.b.f µs
t.b.f t.b.f µs
2 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000