BU4506DX Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
BV_EBO
R_be
V_CEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
V_CEsat
V_BEsat
h_FE
h_FE
V_F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
I_B = 600 mA
V_EB = 6 V
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_C = 3.0 A; I_B = 0.75 A
I_C = 3.0 A; I_B = 0.75 A
I_C = 0.5 A; V_CE = 5 V
I_C = 3 A; V_CE = 5 V
I_F = 3.0 A
MIN.
-
-
7.5
-
800
-
0.8
-
4.2
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
13.5 -
V
30
-
Ω
-
-
V
-
3.0
V
0.89 0.98 V
7
-
5.5 7.3
1.55 1.9
V
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
V_fr
Anti-parallel diode forward recovery
voltage
t_fr
Anti-parallel diode forward recovery
time
CONDITIONS
I_Csat = 3.0 A; I_B1 = 0.6 A; (I_B2 = -1.5 A)
I_F = 3 A; dI_F/dt = 50 A/µs
V_F = 5 V
TYP. MAX. UNIT
3.7 4.5 µs
300 400 ns
19
-
V
400
-
ns
2 Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000