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| BU2530AW Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2530AW
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEsat
VBEsat
hFE
hFE
Emitter cut-off current
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IC = 9.0 A; IB = 1.64 A
IC = 9.0 A; IB = 1.64 A
IC = 1 A; VCE = 5 V
IC = 9 A; VCE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
-
1.0 mA
7.5 14
-
V
-
-
5.0
V
0.825 0.91 1.0
V
9
17 27
5.5
8
10
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICsat = 9.0 A; LC = 200 µH; Cfb = 13 nF;
VCC = 138 V; IB(end) = 1.3 A;
-IBM = 4.5 A; -VBB = 4 V; LB = 1 µH
TYP.
3.5
0.14
MAX.
4.5
0.25
UNIT
µs
µs
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
10us
13us
32us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
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