 English |
|
|
|
|
|
|
|
| BU2525AF Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 100 mA; VCE = 5 V
IC = 8 A; VCE = 5 V
MIN.
-
-
-
7.5
800
-
-
-
5
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
13.5 -
V
-
-
V
-
5.0
V
-
1.1
V
13
-
7
9.5
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (32 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
TYP.
145
3.0
0.2
MAX.
-
4.0
0.35
UNIT
pF
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese